Stack structure with semiconductor chip embedded in carrier

Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Multiple housings

Reexamination Certificate

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Details

C257S685000, C257S723000, C257S725000, C257S773000, C257S774000, C257S776000, C257S777000, C257SE25013, C257SE23169, C361S735000, C361S790000

Reexamination Certificate

active

07321164

ABSTRACT:
A stack structure with semiconductor chips embedded in carriers comprises two carriers stacking together as a whole, at least two semiconductor chips having active surfaces with electrode pads and inactive surfaces corresponding thereto placed in the cavities of the carriers, at least one dielectric layer formed on the active surface of the semiconductor chip and the surface of the carrier, at least a conductive structure formed in the opening of the dielectric layer, and at least a circuit layer formed on the surface of the dielectric layer wherein the circuit layer is electrically connected to the electrode pad by the conductive structure, so as to form a three-dimensional module to increase the storage capacity dramatically and integrate the semiconductor chips in the carriers for efficiently reducing the size of the module, so that the combinations can be changed flexibly to form the required storage capacity according to the demands.

REFERENCES:
patent: 5111278 (1992-05-01), Eichelberger
patent: 6400573 (2002-06-01), Mowatt et al.
patent: 6798049 (2004-09-01), Shin et al.
patent: 7091593 (2006-08-01), Ishimaru et al.
patent: 7135780 (2006-11-01), Jiang
patent: 7196408 (2007-03-01), Yang et al.
patent: 2004/0033654 (2004-02-01), Yamagata
patent: 2005/0093142 (2005-05-01), Terui
patent: 2005/0275088 (2005-12-01), Sakurai et al.

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