Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-07-05
2011-07-05
Dickey, Thomas L (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE29323, C257SE43004
Reexamination Certificate
active
07973351
ABSTRACT:
A stack includes a crystalline MgO layer, crystalline Heusler alloy layer, and amorphous Heusler alloy layer. The crystalline Heusler alloy layer is provided on the MgO layer. The amorphous Heusler alloy layer is provided on the crystalline Heusler alloy layer.
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Office Action mailed Aug. 17, 2010, in Japanese Patent Application No. 2008-246718 (with English-language Translation).
Inokuchi Tomoaki
Ishikawa Mizue
Marukame Takao
Saito Yoshiaki
Sugiyama Hideyuki
Dickey Thomas L
Kabushiki Kaisha Toshiba
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
Yushin Nikolay
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