Stack-film trench capacitor and method for manufacturing the...

Details Stack-film trench capacitor and method for manufacturing the... Stack-film trench capacitor and method for manufacturing the...

2006-04-18

2006-04-18

Owens, Douglas W. (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S311000

Reexamination Certificate

active

07030442

ABSTRACT:
A trench capacitor includes an electrode having a first conductive area formed in a trench provided in a substrate, and a second conductive area extending from a bottom of the trench, the second conductive area being electrically coupled to the first conductive area and spaced apart from the first conductive area; a storage node having a first conductive extension extending into a first dielectric space provided between the first conductive area and the second conductive area of the electrode, and a second conductive extension extending into a second dielectric space provided within the second conductive area of the electrode; and a dielectric layer electrically insulating the electrode from the storage node.

REFERENCES:
patent: 6297088 (2001-10-01), King
patent: 6319787 (2001-11-01), Enders et al.
patent: 6319790 (2001-11-01), Kubota
patent: 6326261 (2001-12-01), Tsang et al.
patent: 6897508 (2005-05-01), Sneh

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