Stable N-channel MOS structure

Details Stable N-channel MOS structure Stable N-channel MOS structure

1977-09-23

1980-07-15

Tupman, W. C.

Metal working

Method of mechanical manufacture

Assembling or joining

29578, 357 23, 357 59, B01J 1700

Patent

active

042121000

ABSTRACT:
An N-channel MOS integrated circuit device having a composite metal gate structure which has improved temperature stability. The gate structure uses a polysilicon layer to separate the conventional metal gate from the conventional underlying gate oxide. The metal gate and the polysilicon layer extend laterally at least to the lateral extent of the gate region. This composite metal gate structure improves the temperature stability of the IC, and may be used, for example, in read-only memory (ROM) applications. The polysilicon layer is formed without additional photolithographic steps.

REFERENCES:
patent: 3958323 (1976-05-01), De La Moneda
patent: 4074300 (1978-02-01), Sakai
patent: 4114256 (1978-09-01), Thibault
patent: 4115914 (1978-09-01), Harari

Affiliated with

Also associated with

Rating

Stable N-channel MOS structure does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Stable N-channel MOS structure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Stable N-channel MOS structure will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-458063