Stable metallization for diamond and other materials

Details Stable metallization for diamond and other materials Stable metallization for diamond and other materials

1995-08-18

2000-09-05

Nelms, David

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Formation of semi-insulative polycrystalline silicon

438785, 438786, 438653, 438656, H01L 2131

Patent

active

061142565

ABSTRACT:
An adherent and metallurgically stable metallization system for diamond is presented. The big improvement in metallurgical stability is attributed to the use of a ternary, amorphous Ti--Si--N diffusion barrier. No diffusion between the layers and no delamination of the metallization was observed after annealing the schemes at 400.degree. C. for 100 hours and at 900.degree. C. for 30 minutes. Thermal cycling experiments in air from -65 to 155.degree. C. and adhesion tests were performed. Various embodiments are disclosed.

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