Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration
Reexamination Certificate
2007-05-29
2007-05-29
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified configuration
C257S758000, C257SE23011, C438S672000
Reexamination Certificate
active
10919875
ABSTRACT:
In the preferred embodiment, a thick regular-k dielectric is formed on a substrate. A tungsten plug is formed in the thick regular-k dielectric. The thick regular-k dielectric is recessed and a thin low-k dielectric is formed on the thick regular-k dielectric. The thin low-k dielectric acts as a glue layer and as an etch stop layer. A thick low-k dielectric is formed on the thin low-k material. Optionally, an opening is formed through the thick low-k dielectric to expose the tungsten plug. The opening is then filled with copper or copper alloys.
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Chapter 4: Capacitance Model, BSIM3v3 Manual, UC Berkeley, 1995, http://bentgroup.stanford.edu/files/Flory—web.pdf.
Jang Syun-Ming
Tseng Horng-Huei
Mandala Jr. Victor A.
Pert Evan
Slater & Matsil L.L.P.
Taiwan Semiconductor Manufacturing Company , Ltd.
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