Stable high voltage semiconductor device structure

Details Stable high voltage semiconductor device structure Stable high voltage semiconductor device structure

1995-01-17

1997-05-13

Fahmy, Wael

Active solid-state devices (e.g., transistors, solid-state diode

With means to increase breakdown voltage threshold

Field relief electrode

257491, 257495, H01L 2358

Patent

active

056295529

ABSTRACT:
A power integrated circuit device with multiple guard rings and field plates overlying regions between each of the guard rings. Each of the field plates form overlying a dielectric layer also between each of the guard rings. Multiple field plates can exist between each of such guard rings. At least one field plate couples to a main junction region, and another field plate couples to a peripheral region, typically a scribe line. The present power device structure with multiple guard rings and field plates provides a resulting guard ring structure which allows for such device to achieve higher voltage applications.

REFERENCES:
patent: 4399449 (1983-08-01), Herman et al.
patent: 4419684 (1983-12-01), Sakai et al.
patent: 4468686 (1984-08-01), Rosenthal
patent: 5101244 (1992-03-01), Mori et al.
patent: 5434445 (1995-07-01), Ravanelli et al.

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