Stabilizing fluorine etching of low-k materials

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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C438S631000, C438S633000, C438S638000, C438S675000, C438S687000

Reexamination Certificate

active

07132363

ABSTRACT:
Damascene processing is implemented with dielectric barrier films (50, 90, 91) for improved step coverage and reduced contact resistance. Embodiments include the use of two different dielectric films (50, 31) to avoid misalignment problems. Embodiments further include dual damascene (100A,100B) processing using Cu metallization (100).

REFERENCES:
patent: 5821168 (1998-10-01), Jain
patent: 5916823 (1999-06-01), Lou et al.
patent: 5966634 (1999-10-01), Inohara et al.
patent: 6017817 (2000-01-01), Chung et al.
patent: 6040243 (2000-03-01), Li et al.
patent: 6090699 (2000-07-01), Aoyama et al.
patent: 6207585 (2001-03-01), Hasegawa et al.
patent: 6284657 (2001-09-01), Chooi et al.
patent: 6333260 (2001-12-01), Kwon et al.
patent: 6372636 (2002-04-01), Chooi et al.
patent: 6492270 (2002-12-01), Lou
patent: 6521533 (2003-02-01), Morand et al.
patent: 6683002 (2004-01-01), Chooi et al.
patent: 6919638 (2005-07-01), Huang et al.
patent: 2001/0006255 (2001-07-01), Kwon et al.
patent: 2001/0051420 (2001-12-01), Besser et al.
patent: 2002/0111013 (2002-08-01), Okada et al.
patent: 2 798 512 (1999-09-01), None
patent: 2798512 (2001-03-01), None
patent: WO 00/39849 (2000-07-01), None
Wolf “silicon processing for the visi era” 1986, vol. 1, pp. 193-195.
Wolf et al. “silicon processing for the VLSI” 1986, vol. 1, pp. 191-196.
Database WPI, Derwent Publications Ltd., London, GB: AN 2000-670923, XP002216560 & KR 2000 002 928 A abstract -& US 6 333 260 B1 (Shin Hong-Jae et al) Dec. 26, 2001 (Dec. 25, 2001) column 8, line 35 -column 10, line 12: figures 6-9.

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