Organic compounds -- part of the class 532-570 series – Organic compounds – Silicon containing
Reexamination Certificate
2008-09-09
2008-09-09
Barts, Samuel (Department: 1621)
Organic compounds -- part of the class 532-570 series
Organic compounds
Silicon containing
Reexamination Certificate
active
10650282
ABSTRACT:
A siloxane dielectric precursor for use in a chemical vapor deposition (CVD) process, which has been dosed with a stabilizing agent(s) selected from free-radical inhibitors, end-capping agents and mixtures thereof. The stabilized siloxane dielectric precursor reduces the occurrence of premature deposition reactions occurring in the heated environment of the CVD delivery lines and process hardware.
REFERENCES:
patent: 4087448 (1978-05-01), Rossmy et al.
patent: 4127598 (1978-11-01), McEntee
patent: 4156689 (1979-05-01), Ashby et al.
patent: 4374110 (1983-02-01), Darnell et al.
patent: 4670299 (1987-06-01), Fukuyama et al.
patent: 4745169 (1988-05-01), Sugiyama et al.
patent: 4755370 (1988-07-01), Kray et al.
patent: 4764631 (1988-08-01), Halm et al.
patent: 4871616 (1989-10-01), Kimura et al.
patent: 5043789 (1991-08-01), Linde et al.
patent: 5047492 (1991-09-01), Weidner et al.
patent: 5098865 (1992-03-01), Machado et al.
patent: 5204314 (1993-04-01), Kirlin et al.
patent: 5210250 (1993-05-01), Watanuki et al.
patent: 5276173 (1994-01-01), Marko et al.
patent: 5281686 (1994-01-01), Blohm et al.
patent: 5312947 (1994-05-01), Tsukuno et al.
patent: 5484867 (1996-01-01), Lichtenhan et al.
patent: 5536323 (1996-07-01), Kirlin et al.
patent: 5711816 (1998-01-01), Kirlin et al.
patent: 5804040 (1998-09-01), Asai et al.
patent: 6114500 (2000-09-01), Mori et al.
patent: 6147009 (2000-11-01), Grill et al.
patent: 6171945 (2001-01-01), Mandal et al.
patent: 6331494 (2001-12-01), Olson et al.
patent: 6368359 (2002-04-01), Perry et al.
patent: 6383955 (2002-05-01), Matsuki et al.
patent: 6410463 (2002-06-01), Matsuki
patent: 6451712 (2002-09-01), Dalton et al.
patent: 6486082 (2002-11-01), Cho et al.
patent: 6495479 (2002-12-01), Wu et al.
patent: 6858697 (2005-02-01), Mayorga et al.
patent: 6936551 (2005-08-01), Moghadam et al.
patent: 7011864 (2006-03-01), Ishida
patent: 2003/0044531 (2003-03-01), Ishida
patent: 2003/0077918 (2003-04-01), Wu et al.
patent: 2003/0124785 (2003-07-01), Xu et al.
patent: 2003/0146451 (2003-08-01), Huang et al.
patent: 2003/0232137 (2003-12-01), Vrtis et al.
patent: 2004/0054114 (2004-03-01), Mayorga et al.
patent: 2004/0071878 (2004-04-01), Schuhmacher et al.
patent: 2004/0087184 (2004-05-01), Mandal et al.
patent: 2004/0101633 (2004-05-01), Zheng et al.
patent: 2004/0156987 (2004-08-01), Yim et al.
patent: 2005/0130404 (2005-06-01), Moghadam et al.
patent: 2005/0181613 (2005-08-01), Xu et al.
patent: 2005/0268849 (2005-12-01), Ishida
patent: 0543665 (1993-05-01), None
patent: 1 321 469 (2003-06-01), None
patent: 1321469 (2003-06-01), None
patent: 50-111198 (1974-01-01), None
patent: 98/15499 (1998-04-01), None
patent: 2004/027110 (2004-04-01), None
patent: WO 2004/027110 (2004-04-01), None
Mantz, et al., “Thermolysis of Polyhedral Oligomeric Silsesquioxane (POSS) Macromers and POSS-Siloxane Copolymers”, Chem. Mater., 1996, 8, p. 1250-1259.
Ravi K. Laxman, Neil Hendrix Barry Arkles, Terry A. Tabler “Synthesizing Low-K CVD Materials for Fab Use” Semiconductor International, Nov. 1, 2000.
Alfred Grill, et al., Novel Low-k Dual-Phase Materials Prepared by PECVD, Mat. Res. Soc. Symp. Proc. vol. 612, 2000 Materials Research Society.
Albert Wang, et al. “TMCTS for Gate Dielectric in Thin Film Transistors”, Mat. Res. Soc. Meeting 1996.
A. Grill, et al., “Ultralow-k Dielectrics Prepared by Plasma-enhanced Chemical Vapor Deposition”, Applied Physics Letters, vol. 79, No. 6, Aug. 6, 2001.
U.S. Appl. No. 10/015,326, filed Dec. 31, 2001, Chongying Xu, et al.
U.S. Appl. No. 10/301,109, filed Nov. 21, 2002, Alexander S. Borovik.
Baum Thomas H.
Borovik Alexander S.
Chen Tianniu
Laxman Ravi K.
Xu Chongying
Advanced Technology & Materials Inc.
Barts Samuel
Chappuis Maggie
Hultquist Steven J.
Intellectual Property / Technology Law
LandOfFree
Stabilized cyclosiloxanes for use as CVD precursors for... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Stabilized cyclosiloxanes for use as CVD precursors for..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Stabilized cyclosiloxanes for use as CVD precursors for... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3907528