Stabilization of the interface between tiN and A1 alloys

Details Stabilization of the interface between tiN and A1 alloys Stabilization of the interface between tiN and A1 alloys

1997-11-26

2000-10-03

Nelms, David

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438648, 438656, 438660, 438663, H01L 214763

Patent

active

061272663

ABSTRACT:
A method of manufacturing a semiconductor device which includes an interface between a metal layer and a barrier layer of a nitride of a refractory metal, comprising the steps of depositing the barrier layer onto a wafer at high temperature; subjecting the barrier layer to a mixture of oxygen or an oxygen-containing gas and an inert gas in the presence of a plasma at low pressure and for a time sufficient to oxidize the surface of the barrier layer; removing the oxygen-containing gas; and depositing the metal layer onto the oxidized surface without subjecting said wafer to an air break. The method permits high throughput to be achieved at low cost.

REFERENCES:
patent: 5232871 (1993-08-01), Huei-Min
patent: 5747361 (1998-05-01), Ouellet
patent: 5895266 (1996-02-01), Fu et al.
Dixit G A et al: "Reactively Sputtered Titanium Nitride Films for Submicron Contact Barrier Metallization" Applied Physics Letters, vol. 62, No. 4, Jan. 25, 1993, pp. 357-359, XP000335994 see whole document relevant to Claim 1, 10, 12.
Patent Abstracts of Japan vol. 096, No. 009, Sep. 30, 1996 & JP 08 130302 A (Toshiba Corp.) May 21, 1996 see Abstract.

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