Stabilization of fluorine-containing dielectric materials in...

Details Stabilization of fluorine-containing dielectric materials in... Stabilization of fluorine-containing dielectric materials in...

2005-06-28

2005-06-28

Baumeister, B. William (Department: 2829)

Semiconductor device manufacturing: process

Gettering of substrate

By implanting or irradiating

C438S622000, C438S761000, C438S783000, C438S473000, C438S474000, C438S795000, C438S800000, C257S645000, C257S651000, C257S908000

Reexamination Certificate

active

06911378

ABSTRACT:
A process for providing regions of substantially lower fluorine content in a fluorine-containing dielectric comprises exposing the fluorine-containing dielectric to a reactive species to form volatile byproducts.

REFERENCES:
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patent: 6153514 (2000-11-01), Wang et al.
patent: 6309955 (2001-10-01), Subramanian et al.
patent: 6433432 (2002-08-01), Shimizu
patent: 6448655 (2002-09-01), Babich et al.
patent: 6452251 (2002-09-01), Bernstein et al.
patent: 6699531 (2004-03-01), Fukiage
patent: 2002/0063312 (2002-05-01), Towle et al.

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