SRAM with read assist

Details SRAM with read assist SRAM with read assist

2008-04-29

2008-04-29

Nguyen, Viet Q. (Department: 2827)

Static information storage and retrieval

Systems using particular element

Flip-flop

C365S156000, C365S206000, C365S194000

Reexamination Certificate

active

11401679

ABSTRACT:
A Static Random Access Memory (SRAM) matrix with a read assist is described. The read assist reduces the probability associated with an SRAM matrix becoming upset by a radiation event. Each SRAM cell within the SRAM matrix includes an active delay for increasing Single Event Upset (SEU) tolerance. The described SRAM matrix also includes a read assist coupled to each column of the SRAM matrix. The read assists store values associated with a row of SRAM cells, one SRAM cell of which is to be written to. If a radiation event occurs on any of the SRAM cells not being written to, the read assist restores an original value associated with the upset SRAM cell.

REFERENCES:
patent: 6233191 (2001-05-01), Gould et al.
patent: 6788566 (2004-09-01), Bhavnagarwala et al.
patent: 7200031 (2007-04-01), Liu et al.
patent: 7233518 (2007-06-01), Liu
patent: 2001/0010655 (2001-08-01), Manning
patent: 2007/0242537 (2007-10-01), Golke et al.

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