SRAM with asymmetrical pass gates

Static information storage and retrieval – Systems using particular element – Flip-flop

Reexamination Certificate

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C365S156000

Reexamination Certificate

active

07542330

ABSTRACT:
An SRAM having asymmetrical FET pass gates and a method of fabricating an SRAM having asymmetrical FET pass gates. The pass gates are asymmetrical with respect to current conduction from the drain to the source of the pass gate being different from current conduction from the source to the drain of the pass gate.

REFERENCES:
patent: 5790452 (1998-08-01), Lien
patent: 6341083 (2002-01-01), Wong
patent: 6549453 (2003-04-01), Wong
patent: 6936522 (2005-08-01), Steegen et al.
patent: 7362606 (2008-04-01), Chuang et al.

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