SRAM with a programmable reference voltage

Details SRAM with a programmable reference voltage SRAM with a programmable reference voltage

1991-04-23

1998-03-24

Clawson, Jr, Joseph E.

Static information storage and retrieval

Systems using particular element

Flip-flop

365156, 36518909, 365208, G11C 500

Patent

active

057320152

ABSTRACT:
The leakage current through a static random access memory ("SRAM") containing a plurality of memory cells connected between a voltage supply and a reference voltage, wherein each memory cell uses native transistors as load elements, is controlled by controlling the reference voltage.

REFERENCES:
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patent: 4459683 (1984-07-01), Yalamanchici et al
patent: 4764897 (1988-08-01), Kameyama et al
patent: 4764899 (1988-08-01), Lewallen et al
patent: 4799194 (1989-01-01), Arakawa
patent: 4901279 (1990-02-01), Plass
patent: 4933903 (1990-06-01), Nakaizumi
P. Richman, "MOS Field Effect Transistors and Integrated Circuits", .COPYRGT.1973 John Wiley & Sons, INC., 17-25,TK 7871.85R466 .

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