SRAM structure

Details SRAM structure SRAM structure

1995-07-28

1997-08-26

Fahmy, Wael

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257538, 257904, H01L 2976, H01L 2900, H01L 2711

Patent

active

056613253

ABSTRACT:
In a semiconductor device, an undoped polysilicon layer on the uppermost layer is used as a resistor having a high resistance without any patterning. A metal wiring layer formed on this resistor is connected to a conductive layer formed below the resistor via a contact hole extending through the high resistor device. In addition, by oxidizing an end portion, exposed in the contact hole, of the resistor, an oxide film is interposed between the high resistor device and the metal wiring layer to attain electrical insulation therebetween. In this manner, the resistor is formed of the undoped polysilicon layer by using a multilayered polysilicon structure including the undoped polysilicon layer. Therefore, the integration degree can be increased, and at the same time, a stepped portion accompanying the multilayered silicon structure is relaxed to improve the flatness of the surface and prevent poor step coverage or bridging of an upper wiring layer.

REFERENCES:
patent: 5241206 (1993-08-01), Lee et al.

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