SRAM memory cell

Details SRAM memory cell SRAM memory cell

1998-03-23

2000-05-23

Tran, Andrew Q.

Static information storage and retrieval

Systems using particular element

Flip-flop

365156, G11C 1141

Patent

active

060672471

ABSTRACT:
A three-transistor SRAM memory cell includes a bistable field-effect transistor having a fully depleted floating channel region and a hysteretic gate voltage characteristic curve. The bistable field-effect transistor has a gate to be connected to a first bit line for the purpose of writing to the memory cell and a second channel terminal to be connected to a second bit line for the purpose of reading from the memory cell. The two bit lines can be identical. The connection between the bit lines and the bistable transistor can be effected through first and second respective transistors which are each controlled by a respective word line.

REFERENCES:
patent: 5600589 (1997-02-01), Ishigaki et al.
patent: 5657290 (1997-08-01), Churcher
"Breakdown voltage of submicron MOSFET's in fully depleted SOI" (Kistler et al.), Microelectronics Manufacturing and Reliability, vol. 1802, 1992, pp. 202-212.
"FET memory systems" (Terman), IEEE Transactions on Magnetics, vol. MAG-6, No. 3, Sep. 1970, pp. 584-589;.
"On bistable behavior and open-base breakdown of bipolar transistors in the avalanche regime--modeling and application" (Reisch), IEEE Transactions on Electron Devices, vol. 39, No. 6, Jun. 1992, pp. 1398-1409.
"A static memory cell based on the negative resistance of the gate terminal of p-n-p-n devices" (Shulman), IEEE Journal of Solid State Circuits, vol. 29, No. 6, Jun. 1994, pp. 733-736;.
"A novel high speed, high density SRAM cell utilizing a bistable GeSi/Si tunnel diode" (Carns et al.), Proceedings of IEEE International Electron Devices Meeting, San Francisco, Dec. 1994, pp. 381-384;.

Affiliated with

Also associated with

Rating

SRAM memory cell does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with SRAM memory cell, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and SRAM memory cell will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1841621