SRAM memory cell

Static information storage and retrieval – Systems using particular element – Semiconductive

Patent

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Details

365154, 36518901, 36518905, G11C 1300

Patent

active

051669021

ABSTRACT:
A compact SRAM memory cell employs two invertor areas longitudinally offset along a longitudinal axis and having transistor gates interdigitated, with a gate electrode of one invertor extending perpendicular to the longitudinal axis to make contact with the output node of the other invertor. Adjacent cells are related by a 180.degree. rotation through a transverse edge and a reflection through a longitudinal edge.

REFERENCES:
patent: 5115288 (1992-05-01), Manley

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