Static information storage and retrieval – Systems using particular element – Flip-flop
Reexamination Certificate
2007-01-09
2007-01-09
Tran, Michael (Department: 2827)
Static information storage and retrieval
Systems using particular element
Flip-flop
C365S205000
Reexamination Certificate
active
11033934
ABSTRACT:
A SRAM (14) includes a SRAM cell (26), the cell (26) includes a first storage node (N1), a second storage node (N2), and a cross coupled latch (40) including a first primary source current path to the first storage node, a first primary sink current path to the first storage node, a second primary source current path to the second storage node, a second primary sink current path to the second storage node, a fifth primary current path to the first storage node, and a sixth primary current path to the second storage node. During standby and/or a read operation of the SRAM cell (26), one of the fifth primary current path and the sixth primary current path is conductive. During a write operation, the fifth primary current path and the sixth primary current path are non-conductive.
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Kenkare Prashant U.
Ramaraju Ravindraraj
Sarker Jogendra C.
Dolezal David G.
Freescale Semiconductor Inc.
Hill Daniel D.
Tran Michael
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