SRAM employing virtual rail scheme stable against various...

Details SRAM employing virtual rail scheme stable against various... SRAM employing virtual rail scheme stable against various...

2006-09-19

2006-09-19

Phung, Anh (Department: 2824)

Static information storage and retrieval

Powering

C365S154000

Reexamination Certificate

active

07110317

ABSTRACT:
An SRAM employs a virtual rail configuration that is stable against process-voltage-temperature (PVT) variation. The SRAM provides a virtual power supply voltage to an SRAM cell that is obtained by lowering a power supply voltage by a threshold voltage of a transistor and a virtual ground voltage obtained by raising a ground voltage by a threshold voltage of a transistor. Due to the use of PMOS and NMOS transistors of diode types connected between the power supply voltage and the virtual power supply voltage and the use of NMOS and PMOS transistors of diode types connected between the ground voltage and the virtual ground voltage, a virtual power supply voltage level and a virtual ground voltage level that are stable even against various PVT variations are provided, so that low-leakage current characteristics are stable.

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