Static information storage and retrieval – Systems using particular element – Flip-flop
Reexamination Certificate
2007-09-11
2007-09-11
Auduong, Gene N. (Department: 2827)
Static information storage and retrieval
Systems using particular element
Flip-flop
C365S156000, C365S189090
Reexamination Certificate
active
11353410
ABSTRACT:
The present invention discloses a memory device with a leakage current reduction feature. The memory device includes at least one memory cell for storing a value, and at least one switch module coupled to the memory cell for generating an operating voltage at various levels depending on various operation modes of the memory cell. The operating voltage is at a first level when the memory cell is being accessed, and is at a second level lower than the first level when the memory cell is not being accessed, thereby reducing a leakage current for the memory cell.
REFERENCES:
patent: 6560139 (2003-05-01), Ma et al.
patent: 6654277 (2003-11-01), Hsu et al.
patent: 6724648 (2004-04-01), Khellah et al.
patent: 6839299 (2005-01-01), Bhavnagarwala et al.
patent: 7055007 (2006-05-01), Flautner et al.
patent: 7061820 (2006-06-01), Deng
Lai Fang-Shi Jorcan
Lin Wesley
Auduong Gene N.
Kirkpatrick & Lockhart Preston Gates & Ellis LLP
Taiwan Semiconductor Manufacturing Co. Ltd.
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