Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-02-27
2007-02-27
Mondt, Johannes (Department: 3663)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S206000, C257S351000, C257S616000
Reexamination Certificate
active
10454304
ABSTRACT:
The invention includes SRAM constructions comprising at least one transistor device having an active region extending into a crystalline layer comprising Si/Ge. A majority of the active region within the crystalline layer is within a single crystal of the crystalline layer, and in particular aspects an entirety of the active region within the crystalline layer is within a single crystal of the crystalline layer. The SRAM constructions can be formed in semiconductor on insulator assemblies, and such assemblies can be supported by a diverse range of substrates, including, for example, glass, semiconductor substrates, metal, insulative materials, and plastics. The invention also includes electronic systems comprising SRAM constructions.
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Micro)n Technology, Inc.
Mondt Johannes
Wells St. John P.S.
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