SRAM-compatible memory device having three sense amplifiers...

Details SRAM-compatible memory device having three sense amplifiers... SRAM-compatible memory device having three sense amplifiers...

2006-02-21

2006-02-21

Phung, Anh (Department: 2824)

Static information storage and retrieval

Read/write circuit

Flip-flop used for sensing

C365S207000, C365S222000

Reexamination Certificate

active

07002864

ABSTRACT:
The SRAM-compatible memory device includes a first pair of bit lines for transferring data fetched from/written in a DRAM cell in a first memory block, a second pair of bit lines for transferring data fetched from/written in a DRAM cell in a second memory block. Further, the SRAM compatible memory device includes the first sense amplifier for amplifying and latching data in the first pair of bit lines, a second sense amplifier for amplifying and latching data in the second pair of bit lines, a third sense amplifier for amplifying and latching data transferred whereto, a first switching unit for controlling an electrical connection between the first pair of bit lines and the third sense amplifier, and a second switching unit for controlling an electrical connection between the second pair of bit lines and the third sense amplifier.

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