SRAM cell with well contacts and P+ diffusion crossing to...

Details SRAM cell with well contacts and P+ diffusion crossing to... SRAM cell with well contacts and P+ diffusion crossing to...

2005-02-15

2005-02-15

Abraham, Fetsum (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Fet configuration adapted for use as static memory cell

C365S227000, C365S154000, C438S238000, C438S239000, C438S386000

Reexamination Certificate

active

06856031

ABSTRACT:
A low cost SRAM (Static Random Access Memory) cell is disclosed with P well and N well contacts and preferably with a P+ diffusion crossing to ground. The SRAM cell is complete at the M2 metal level and has improved cell passgate leakage, functionality and fabrication yields. The SRAM cell comprises cross coupled pnp pull-up devices P1, P2and npn pull-down devices N1, N2, with the P1, P2devices being connected to the power supply VDD, and the N1, N2devices being coupled through a P+ diffusion region to ground. A first passgate is coupled between a first bitline and the junction of the devices P1and N1, with its gate coupled to a wordline, and a second passgate is coupled between a second bitline and the junction of devices P2and N2, with its gate coupled to the wordline.

REFERENCES:
patent: 5124774 (1992-06-01), Godinho et al.
patent: 5359226 (1994-10-01), DeJong
patent: 5525923 (1996-06-01), Bialas et al.
patent: 5946566 (1999-08-01), Choi
patent: 20010039089 (2001-11-01), Noble
patent: 20020004842 (2002-02-01), Spitzer et al.
patent: 93147269 (1995-01-01), None

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