Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-06-24
2000-10-31
Chaudhuri, Olik
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257903, 257393, 438199, H01L 2976, H01L 2994, H01L 31062, H01L 31116
Patent
active
061406848
ABSTRACT:
A six transistor static random access memory (SRAM) cell with thin-film pull-up transistors and method of making the same includes providing two bulk silicon pull-down transistors of a first conductivity type, two active gated pull-up thin-film transistors (TFTs) of a second conductivity type, two pass gates, a common word line, and two bit line contacts. The bulk silicon pull-down transistors, two active gated pull-up TFTs, and two pass gates are connected at four shared contacts. In addition, the two bulk silicon pull-down transistors and the two active gated pull-up TFTs are formed with two polysilicon layers, a first of the polysilicon layers (poly1) is salicided and includes poly1 gate electrodes for the two bulk silicon pull-down transistors. A second of the polysilicon layers (poly2) includes desired poly2 stringers disposed along side edges of the poly1 gate electrodes, the desired poly2 stringers forming respective channel regions of the pull-up TFTs.
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Bryant Frank Randolph
Chan Tsiu Chiu
Chaudhuri Olik
Galanthay Theodore E.
Jorgenson Lisa K.
STMicroelectronic, Inc.
Szuwalski Andre
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