SRAM cell structure and manufacturing method thereof

Details SRAM cell structure and manufacturing method thereof SRAM cell structure and manufacturing method thereof

2006-05-02

2008-11-11

Ho, Tu-Tu V (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S300000, C257S301000, C257SE21661, C257SE27098, C438S243000

Reexamination Certificate

active

07449741

ABSTRACT:
A static random access memory (SRAM) cell structure at least comprising a substrate, a transistor, an upper electrode and a capacitor dielectric layer. A device isolation structure is set up in the substrate to define an active region. The active region has an opening. The transistor is set up over the active region of the substrate. The source region of the transistor is next to the opening. The upper electrode is set up over the opening such that the opening is completely filled. The capacitor dielectric layer is set up between the upper electrode and the substrate.

REFERENCES:
patent: 2001/0028075 (2001-10-01), Chen et al.
patent: 2004/0121533 (2004-06-01), Huang et al.
patent: 2005/0056885 (2005-03-01), Pai et al.

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