SRAM cell having stepped boundary regions and methods of...

Details SRAM cell having stepped boundary regions and methods of... SRAM cell having stepped boundary regions and methods of...

2006-07-13

2010-10-05

Smith, Matthew (Department: 2823)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S199000, C438S589000, C257SE21546, C257SE21661

Reexamination Certificate

active

07807546

ABSTRACT:
A semiconductor device comprises a substrate. In addition, the semiconductor device comprises an active region and an isolation region. The active region is in the substrate and comprises a semiconductor material. The isolation region is also in the substrate, adjacent the active region and comprises an insulating material. The active region and isolation region form a surface having a step therein. The semiconductor further comprises a dielectric material formed over the step. The dielectric material has a dielectric constant greater than about 8.

REFERENCES:
patent: 5275965 (1994-01-01), Manning
patent: 5971768 (1999-10-01), Kim
patent: 6133113 (2000-10-01), Jenq et al.
patent: 6352897 (2002-03-01), Sung
patent: 6461887 (2002-10-01), Pradeep et al.
patent: 6638813 (2003-10-01), Tzeng et al.
patent: 6670279 (2003-12-01), Pai et al.
patent: 2002/0094622 (2002-07-01), Sneelal et al.
patent: 2003/0146458 (2003-08-01), Horiuchi et al.
patent: 2004/0217448 (2004-11-01), Kumagai et al.
patent: 2005/0156158 (2005-07-01), King
Conley, J. F., et al., “Preliminary Investigation of Hafnium Oxide Deposited via Atomic Layer Chemical Vapor Deposition (ALCVD),” 2001 IRW Final Report. IEEE, pp. 11-15.
Oh, C. B., et al., “Manufacturable Embedded CMOS 6T-SRAM Technology with High-k Gate Dielectric Device for System-on-Chip Applications,” IEDM, 2002, pp. 423-426.
Samavedam, S. B., “Dual-Metal Gate CMOS with HfO2Gate Dielectric,” IEDM, 2002, pp. 433-436.

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