Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1998-03-26
1999-08-17
Martin-Wallace, Valencia
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257379, 257903, 438238, 365154, H01L 2976
Patent
active
059397608
ABSTRACT:
A method of forming an SRAM cell includes, a) providing a pair of pull-down gates having associated transistor diffusion regions operatively adjacent thereto, one of the diffusion regions of each pull-down gate being electrically connected to the other pull-down gate; b) providing a pair of pull-up resistor nodes for electrical connection with a pair of respective pull-up resistors, the pull-up nodes being in respective electrical connection with one of the pull-down gate diffusion regions and the other pull-down gate; c) providing a first electrical insulating layer outwardly of the resistor nodes; d) providing a pair of contact openings, with respective widths, through the first insulating layer to the pair of resistor nodes; e) providing a second electrical insulating layer over the first layer and to within the pair of contact openings to a thickness which is less than one-half the open widths; f) anisotropically etching the second electrical insulating layer to define respective electrical insulating annulus spacers received within the respective pair of contact openings and a pair of elongated pull-up resistor openings laterally inward thereof; g) providing electrically conductive material within the pair of elongated pull-up resistor openings in electrical connection with the pair of pull-up resistor nodes to define the pull-up resistors; and h) providing a Vcc line in electrical connection with the pull-up resistors. SRAM circuitry produced according to the above method and by other methods are also contemplated.
REFERENCES:
patent: 4567609 (1986-01-01), Metcalf
patent: 4933739 (1990-06-01), Harari
patent: 4951112 (1990-08-01), Choi et al.
patent: 4990998 (1991-02-01), Koike et al.
patent: 5023727 (1991-06-01), Boyd et al.
patent: 5087956 (1992-02-01), Ikeda et al.
patent: 5093706 (1992-03-01), Mitsuhashi et al.
patent: 5159430 (1992-10-01), Manning et al.
patent: 5241206 (1993-08-01), Lee et al.
patent: 5262352 (1993-11-01), Woo et al.
patent: 5308782 (1994-05-01), Mazure et al.
patent: 5323045 (1994-06-01), Murai
patent: 5398200 (1995-03-01), Mazure et al.
patent: 5408130 (1995-04-01), Woo et al.
patent: 5474948 (1995-12-01), Yamazaki
patent: 5489796 (1996-02-01), Harward
patent: 5570311 (1996-10-01), Ema et al.
patent: 5705843 (1998-01-01), Roberts
patent: 5744846 (1998-04-01), Batra et al.
Batra Shubneesh
Manning Monte
Martin-Wallace Valencia
Micro)n Technology, Inc.
LandOfFree
SRAM cell employing substantially vertically elongated pull-up r does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with SRAM cell employing substantially vertically elongated pull-up r, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and SRAM cell employing substantially vertically elongated pull-up r will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-317165