SRAM cell employing substantially vertically elongated pull-up r

Details SRAM cell employing substantially vertically elongated pull-up r SRAM cell employing substantially vertically elongated pull-up r

1997-03-11

1998-03-24

Nguyen, Viet Q.

Static information storage and retrieval

Systems using particular element

Semiconductive

365174, 365177, 365 63, 257536, H01L 2702

Patent

active

057320233

ABSTRACT:
An SRAM cell having at least four field effect transistors includes, a) at least four transistor gates, a ground line, a Vcc line, and a pair of pull-up resistors; the four transistor gates having associated transistor diffusion regions operatively adjacent thereto; and b) the Vcc line and the ground line being provided in different respective elevational planes, the pull-up resistors being substantially vertically elongated between Vcc and selected of the respective transistor diffusion regions operatively adjacent the gates. In an additional aspect, an SRAM cell having at least four field effect transistors includes, i) at least four transistor gates, an electrical interconnect line, a Vcc line, and a pair of pull-up resistors; the four transistor gates having associated transistor diffusion regions operatively adjacent thereto; and ii) the Vcc line and the electrical interconnect line being provided in different respective elevational planes, the pull-up resistors being substantially vertically elongated between Vcc and selected of the respective transistor diffusion regions operatively adjacent the gates.

REFERENCES:
patent: 4178674 (1979-12-01), Liu et al.
patent: 4575923 (1986-03-01), Arnold
patent: 4631705 (1986-12-01), Honda
patent: 4690728 (1987-09-01), Tsang et al.
patent: 4828629 (1989-05-01), Ikeda et al.
patent: 4849801 (1989-07-01), Honjyo et al.
patent: 4961103 (1990-10-01), Saitoh et al.
patent: 5034797 (1991-07-01), Yamanaka et al.
patent: 5172211 (1992-12-01), Godinho et al.
patent: 5177030 (1993-01-01), Lee et al.
patent: 5321650 (1994-06-01), Kikuchi et al.
patent: 5365104 (1994-11-01), Godinho et al.
patent: 5489796 (1996-02-01), Harward
patent: 5567644 (1996-10-01), Rolfson et al.
patent: 5659514 (1997-08-01), Hazani

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