Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-11-15
2009-06-16
Weiss, Howard (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S066000, C257S903000, C438S157000
Reexamination Certificate
active
07547947
ABSTRACT:
Disclosed is an SRAM cell on an SOI, bulk or HOT wafer with two pass-gate n-FETs, two pull-up p-FETs and two pull-down n-FETs and the associated methods of making the SRAM cell. The pass-gate FETs and pull-down FETs are non-planar fully depleted finFETs or trigate FETs. The pull-down FETs comprise non-planar partially depleted three-gated FETs having a greater channel width and a greater gate length and, thus, a greater drive current relative to the pass-gate and pull-up FETs. Additionally, for optimal electron mobility and hole mobility, respectively, the channels of the n-FETs and p-FETs can comprise semiconductors with different crystalline orientations.
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Anderson Brent A.
Nowak Edward J.
Gibb I.P. Law Firm LLC
International Business Machines - Corporation
Kotulak, Esq Richard M.
Rao Steven H
Weiss Howard
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