Sputtering using a plasma-shaping magnet ring

Details Sputtering using a plasma-shaping magnet ring Sputtering using a plasma-shaping magnet ring

1993-09-16

1996-03-05

Breneman, R. Bruce

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

20429816, 20429817, 20429819, 2042982, 20429822, C23C 1434

Patent

active

054964555

ABSTRACT:
Sputtering apparatus and method employing an auxiliary magnetic structure situated between the substrate holder and target of a plasma sputtering chamber to control-the lateral extent of the plasma. The auxiliary magnetic structure, possessing a lower field strength in the plasma region than the principal magnet or magnets, is situated immediately outside of and around a circumference of the chamber's anode shield. The principal magnets maintain the plasma in a ring adjacent to the sputtering target. The auxiliary magnetic structure causes the plasma ring to expand toward the edge of the target or contract away from the edge depending on the magnetic strength and polarity of the structure and its position relative to the target.

REFERENCES:
patent: 4046660 (1977-09-01), Fraser
patent: 4404077 (1983-09-01), Fournier
patent: 4891560 (1990-01-01), Okumura et al.
patent: 5022978 (1991-06-01), Hensel et al.
patent: 5085755 (1992-02-01), Setoyama et al.
patent: 5182001 (1993-01-01), Fritsche et al.
patent: 5277778 (1994-01-01), Daube et al.

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