Sputtering target producing few particles, backing plate or...

Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering

Reexamination Certificate

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Details

C204S298120, C204S298130, C427S446000, C427S455000, C427S456000

Reexamination Certificate

active

06858116

ABSTRACT:
A sputtering target producing few particles, a backing plate or a sputtering apparatus, and a sputtering method producing few particles. An arc-spraying coating film and a plasma-spraying coating film over the former are formed on the sputtering target, a backing plate, or another surface in the sputtering apparatus, where an unwanted film might be formed. Thus a deposit is prevent from separating/flying from the target, backing plate, or another surface where an unwanted film might be formed in the sputtering apparatus.

REFERENCES:
patent: 5244556 (1993-09-01), Inoue
patent: 5965278 (1999-10-01), Finley et al.
patent: 20030155235 (2003-08-01), Miyashita et al.
patent: 05-214505 (1993-08-01), None
patent: 09-272965 (1997-10-01), None
patent: 11-236663 (1999-08-01), None
Machine translation of Michio et al. (JP 09-272965).*
Patent Abstract of Japan One page English Abstract for JP-11-236663 Aug. 1999.
Patent Abstract of Japan one page English abstractfor JP 09-272965 Oct. 1997.
Patent Abstract of Japan one page English abstract JP 05-214505 Aug. 1993.

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