Sputtering target for depositing ferroelectric film, method for

Chemistry: electrical and wave energy – Apparatus – Coating – forming or etching by sputtering

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20429813, 451 48, 438 3, C23C 1400, B24B 100, B24B 730

Patent

active

059977043

ABSTRACT:
The present invention provides sputtering targets which are useful for depositing ferroelectric films and are resistant to crack generation during sputtering. The sputtering targets comprise a disk target which is formed using a sintered material including a compound oxide of Ba and Ti, Sr and Ti, or Ba, Sr and Ti, and which has a surface which has been subjected to grinding, wherein the scratches 4 formed on the surface of the disk target due to grinding have a pattern radiating from an arbitrary point on the plane of the surface of said disk target.

REFERENCES:
patent: 4834860 (1989-05-01), Demaray et al.
patent: 5709783 (1998-01-01), Sanchez et al.

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