Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2011-06-07
2011-06-07
Potter, Roy K (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257SE23157, C204S298130
Reexamination Certificate
active
07956464
ABSTRACT:
A sputtering target includes a tungsten (W)-nickel (Ni) alloy, wherein the nickel (Ni) is present in an amount of between about 0.01 weight % and about 1 weight %.
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Back Jong-min
Kim Su-kyoung
Kim Taek-jung
Lee Sun-ghil
Park Hee-sook
F. Chau & Associates LLC
Potter Roy K
Samsung Electronics Co,. Ltd.
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