Sputtering target and semiconductor device manufactured...

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum

Reexamination Certificate

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Details

C257SE23157, C204S298130

Reexamination Certificate

active

07956464

ABSTRACT:
A sputtering target includes a tungsten (W)-nickel (Ni) alloy, wherein the nickel (Ni) is present in an amount of between about 0.01 weight % and about 1 weight %.

REFERENCES:
patent: 3116146 (1963-12-01), Gatti
patent: 6328927 (2001-12-01), Lo et al.
patent: 6582535 (2003-06-01), Suzuki et al.
patent: 7718117 (2010-05-01), Watanabe et al.
patent: 2000-169923 (2000-06-01), None
patent: 2009-024198 (2009-02-01), None
patent: 10-0881716 (2009-01-01), None

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