Sputtering target and process for preparing the same

Details Sputtering target and process for preparing the same Sputtering target and process for preparing the same

1988-03-07

1990-07-03

Lechert, Jr., Stephen J.

Specialized metallurgical processes, compositions for use therei

Compositions

Consolidated metal powder compositions

75245, 75248, 419 10, 419 23, 419 33, 419 34, 419 38, 419 45, 419 53, 419 55, 419 60, 501 96, 501154, 20429813, 252625, 252644, C22C 2900

Patent

active

049387987

ABSTRACT:
A high melting metal silicide sputtering target which comprises a fine texture whose stoichiometric composition grains of MSi.sub.2, where M represents a high melting metal, have a maximum grain size of 20 .mu.m, whose free silicon grains have a maximum grain size of 50 .mu.m and whose oxygen content is not more than 200 ppm and has a density ratio to the theoretical density of 99% or more has good film characteristics including the reduction in the number of grains formed on the sputtered film and is useful as an electrode material or a wiring material in semi-conductor devices.

REFERENCES:
patent: 3883314 (1975-05-01), Schnyder et al.
patent: 4619697 (1986-10-01), Hijikata et al.
patent: 4820393 (1989-04-01), Brat et al.
P. S. Ho et al., "Thin Films and Interfaces", Proc. Mat. Res. Soc., Nov. 1981, pp. 351-356.

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