Photodetector with first and second contacts

Details Photodetector with first and second contacts Photodetector with first and second contacts

1994-05-12

1995-10-24

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

257457, 257459, 257453, H01L 2714

Patent

active

054612462

ABSTRACT:
A metal-semiconductor-metal (MSM) photodetector in a silicon substrate. An insulating layer overlies the silicon substrate. An active layer is carried on the insulating layer and is separated from the silicon substrate. The active layer has an active layer thickness. Interdigitated fingers are carried on the active layer. The interdigitated fingers develop a potential therebetween related to incident radiation. Spacing between the interdigitated fingers is related to thickness of the active layer.

REFERENCES:
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patent: 5332918 (1994-07-01), Smith et al.
Sand, "Two-Dimensional Ensemble Monte Carlo Calculation of Pulse Responses of Submicrometer GaAs Metal-Semiconductor-Metal Photodetectors", IEEE Transactions on Electron Devices, vol. 38, No. 9, Sep. 1991, pp. 2075-2081.
Ioannou et al., "A Fine-Line-Spot-Position (FLSP) Sensitive Photodetector," IEEE Transactions on Electron Devices, vol. ED-34, No. 4, Apr. 1987, pp. 778-781.
Chou et al, "Nanoscale Tera-Hertz Metal-Semiconductor-Metal Photodetectors", IEEE Journal of Quantum Electronics, vol. 28, No. 10, Oct. 1992, pp. 2358-2368.
Chou et al., "32 GHz metal-semiconductor-metal photodetectors on crystalline silicon", Appl. Phys. Lett, 61 (15) 12 Oct. 1992, 1992 American Institute of Physics, pp. 1760-1762.

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