Sputtering target and method of manufacturing the same

Details Sputtering target and method of manufacturing the same Sputtering target and method of manufacturing the same

1993-02-04

1995-05-23

Walsh, Donald P.

Stock material or miscellaneous articles

All metal or with adjacent metals

Having metal particles

428546, 428548, 428551, 419 6, 419 5, 419 10, 419 32, 419 45, 419 48, 419 53, 419 54, 419 60, 75229, 75245, 75246, B22F 706, B22F 314

Patent

active

054180716

ABSTRACT:
In the present invention, metal silicide grains form an interlinked structure of a metal silicide phase, and Si grains which form a Si phase are discontinuously dispersed between the metal silicide phase to provide a sputtering target having a high density two-phased structure and having an aluminum content of 1 ppm or less. Because of the high density and high strength of the target, the generation of particles from the target during sputtering is reduced, and due to the reduced carbon content of the target, the mixing of carbon into the thin film during sputtering can be prevented.

REFERENCES:
patent: 4938798 (1990-07-01), Chiba et al.
patent: 5196916 (1993-03-01), Ishigawa et al.
patent: 5294321 (1994-03-01), Satou et al.
European Search Report for application filed corresponding to the above-identified U.S. application.

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