Specialized metallurgical processes – compositions for use therei – Compositions – Consolidated metal powder compositions
Patent
1992-03-13
1995-04-25
Nelson, Peter A.
Specialized metallurgical processes, compositions for use therei
Compositions
Consolidated metal powder compositions
75245, 75950, B22F 500
Patent
active
054095174
DESCRIPTION:
BRIEF SUMMARY
TECHNICAL FIELD
The present invention relates to a sputtering target and a method of manufacturing the sputtering target. More specifically, to a sputtering target of high density and high quality adapted to be used for forming thin films as electrodes and wiring members of semiconductor devices, and a method of manufacturing this type of sputtering target.
BACKGROUND TECHNIQUES
Sputtering method has been heretofore used in forming electrodes or wirings of semiconductor devices. Since the method is advantageous for mass-production, and for assuring safety of the film thereby produced, it has been used where argon ions are forced to collide against refractory metal silicide type target so as to release the metal, and to deposite the same on a substrate opposing to the target in the form of a thin film. Thus, it is apparent that the property of the silicide film formed by sputtering substantially depends upon the property of the target.
However, according to increase in degree of integration and minimization of the integrated semiconductor elements, reduction of particles (minute grains) generated from the sputtering target, in a case of forming a refractory metal silicide thin film, is urgently demanded. The reason of this resides in that the minute particles of approximately from 0.2 to 10 .mu.m generated from the target during the sputtering process tend to be mixed in the deposited thin film, and to cause shortage or disconnection of wiring when the semiconductor device is practically used in a circuit, thus reducing the production yield of the target.
Conventionally, various methods have been proposed for manufacturing targets of high density, and the structure of which is made compact and fine, so that the amount of particles generated from the target is reduced.
For instance, Japanese Patent Laid-Open No. 179534/1986 discloses a method wherein a melted Si is impregnated in a semi-sintered raw material made of a refractory metal component (M) and Si component. According to this method, a structure having spherical or oval shaped MSi.sub.2 of grain diameter 5 to 500 .mu.m dispersed in continuous matrices of Si is obtained, and the amount of contained impurities such as carbon and oxygen is held less than 50 ppm.
On the other hand, Japanese Patent Laid-Open No. 219580/1988 discloses a technique wherein a mixture made of a refractory metal (M) and Si is subjected to a silicide reaction under a high vacuum thereby forming a semisintered substance, and this substance is thereafter subjected to a hot isostatic press sintering process for obtaining high density of target. In this case, a compact structure with the maximum grain size of MSi.sub.2 held less than 20 .mu.m and the maximum grain size of free Si held less than 50 .mu.m is obtained. This target has a mixed structure of minute MSi.sub.2 grains and free Si grains dispersed with each other, and the containing amount of Oxygen set less than 200 ppm. Since the Oxygen content of the target is thus suppressed to a low level, the sheet resistance of the resultant thin film can be maintained in a low level.
Furthermore, Japanese Patent Laid-Open Nos. 179061/1988 and 39374/1989 disclose a technique wherein a powdered mixture of a refractory metal (M) and Si is subjected to a silicide reaction under high vacuum, so as to obtain a sintered substance, and this substance is pulverized and added with a composition adjusting silicide powder, and then subjected to a hot-press sintering process so as to obtain a target of high density and Si coagulation suppressed.
However, in the case of the method wherein melted Si is impregnated in a semi-sintered substance, it is found that although a high density target can be obtained as a result of substantial reduction of impurity contents such as carbon, oxygen and the like. The silicon (Si) impregnated in the semi-sintered substance tends to drop out continuously so as to form a matrix; and also that since coarse and large Si portions are formed by Si impregnated in large voids formed in the semi-sintered substance, the
REFERENCES:
patent: 2878113 (1959-03-01), Bechtold
patent: 3285017 (1966-11-01), Henderson et al.
patent: 3361560 (1968-01-01), Severns, Jr. et al.
patent: 3883314 (1975-05-01), Schnyder et al.
patent: 4108646 (1978-08-01), Gennone et al.
patent: 4135286 (1979-01-01), Wright et al.
patent: 4364100 (1982-12-01), Edmonds et al.
patent: 4558017 (1985-12-01), Gupta et al.
patent: 4619695 (1986-10-01), Oikawa et al.
patent: 4619697 (1986-10-01), Hijikata et al.
patent: 4664120 (1987-05-01), Hess
patent: 4750932 (1988-06-01), Parent et al.
patent: 4938798 (1990-07-01), Chiba et al.
Patent Abstract of Japan, vol. 13, No. 592 (C-671) [39401], 26 Dec. 1989; & JP-A-1 249 619 (Toshiba Corp.) 4 Oct. 1989.
Patent abstract of Japan, vol. 13, No. 423 (C-638) [3771], 20th Sep. 1989; & JP-A-1 162 762 (Tokyo Election Ltd) 27 Jun. 1989.
Kawai mituo
Komatu Tooru
Satou Michio
Shizu Hiromi
Yagi Noriaki
Jenkins Daniel
Kabushiki Kaisha Toshiba
Nelson Peter A.
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