Process for producing a semiconductor device

Details Process for producing a semiconductor device Process for producing a semiconductor device

1996-05-07

1997-11-18

Nguyen, Tuan H.

Fishing, trapping, and vermin destroying

437 52, 437 49, 437195, 437228, 437236, H01L 2170

Patent

active

056887124

ABSTRACT:
A semiconductor device includes a semiconductor substrate having a memory cell area and a circuit area surrounding the memory cell area with a boundary area interposed therebetween. A first conductive layer covers the memory cell area and extends onto the boundary area. A first insulating layer covers the surrounding circuit area and part of the extended portion of the first conductive layer. A second insulating layer covering the first insulating layer and the first conductive layer. A throughhole is formed through the first and second insulating layers. A second conductive layer is electrically connected with another conductive layer via the throughhole and extends from the memory cell area to the surrounding circuit area. The process of producing the semiconductor device is also disclosed.

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