Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Patent
1997-12-22
2000-03-07
Nguyen, Nam
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
20419212, 20419223, 20419225, 20419222, 20419215, 438584, 438762, 438763, 438765, C23C 1434
Patent
active
060335378
ABSTRACT:
A sputtering target comprising a main component having magnetic properties and consisting of a metal or an alloy, and a sub-component comprising at least one component selected from the group consisting of a non-magnetic metal and a semiconductor. The main component may be a metal selected from the group consisting of Co, Ni and Fe or may be an alloy of at least two metals selected from the group consisting of Co, Ni and Fe. The sub-component may comprise at least one nonmagnetic metal selected from the group consisting of Ti, Zr, Hf, V, Nb, Ta, Cr, Sn and Pb, or may comprise at least one semiconductor selected from the group consisting of Si and Ge, or may be a mixture of the at least one nonmagnetic metal and the at least one semiconductor.
REFERENCES:
patent: 3972748 (1976-08-01), Livingston
patent: 4002546 (1977-01-01), Shirahata et al.
patent: 4014772 (1977-03-01), Woods et al.
patent: 4049522 (1977-09-01), Ainslie et al.
patent: 4144059 (1979-03-01), Liu et al.
patent: 4231816 (1980-11-01), Cuomo et al.
patent: 4396575 (1983-08-01), Aboaf et al.
patent: 4475961 (1984-10-01), Jin
patent: 4695333 (1987-09-01), Inoue et al.
patent: 4842657 (1989-06-01), Masumoto et al.
patent: 4972285 (1990-11-01), Otomo et al.
patent: 5028280 (1991-07-01), Ihara et al.
patent: 5084795 (1992-01-01), Sakakima et al.
patent: 5154983 (1992-10-01), Watanabe
patent: 5211767 (1993-05-01), Shigeta et al.
patent: 5334267 (1994-08-01), Taniguchi et al.
patent: 5478416 (1995-12-01), Takaoka et al.
patent: 5561307 (1996-10-01), Mihara et al.
patent: 5587026 (1996-12-01), Iwasaki et al.
patent: 5631094 (1997-05-01), Ranjan et al.
patent: 5728279 (1998-03-01), Schlott et al.
patent: 5858125 (1999-01-01), Hasegawa
Kabushiki Kaisha Toshiba
Nguyen Nam
VerSteeg Steven H.
LandOfFree
Sputtering target and method of manufacturing a semiconductor de does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Sputtering target and method of manufacturing a semiconductor de, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Sputtering target and method of manufacturing a semiconductor de will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-359378