Sputtering target

Details Sputtering target Sputtering target

1993-11-10

1994-03-15

Nguyen, Nam

Chemistry: electrical and wave energy

Apparatus

Coating, forming or etching by sputtering

20419223, C23C 1434

Patent

active

052943216

ABSTRACT:
A sputtering target formed of a refractory metallic silicide having a composition MSi.sub.x including a mixture composition of an MSi.sub.2 phase in the form of particles (M: at least one refractory metal selected from a group consisting of W, Mo, Ti, Zr, Hf, Ni and Ta), and an Si phase provided as a matrix phase. Interface layers having a predetermined thickness are formed at the interfaces between the MSi.sub.2 phase and the Si phase. The value X in the composition formula MSi.sub.x is set to a range of 2.0 to 4.0, and the thickness of the interface layers formed between the MSi.sub.2 phase and the Si phase, the dispersion of the composition, the density ratio of the target, the electrical resistivity of the Si phase and the surface roughness are set to predetermined values. An uniform high-quality thin film in which a composition distribution is uniform can be manufactured stably by using this target.

REFERENCES:
patent: 4424101 (1984-01-01), Nowicki
patent: 4619697 (1986-10-01), Hijikata et al.
patent: 4663120 (1987-05-01), Parent et al.
"Self-burning sintering method" Y. Miyamoto, Functional Material 8 (1) Jan., 1989.

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