Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Reexamination Certificate
2005-08-16
2005-08-16
VerSteeg, Steven H (Department: 1753)
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
C204S298060, C204S298110, C204S298210
Reexamination Certificate
active
06929720
ABSTRACT:
A plasma processing system is provided with a cylindrical target, open at both ends, and with a magnet array that forms a hollow cathode magnetron (HCM). At one of the open ends is placed an inductively coupled RF energy source. A dielectric window at one end of the cylindrical target forms a seal between atmosphere and the processing system. A deposition baffle shield permits the coupling of RF energy from the coil into the chamber. The open end of the cylindrical target opposite the RF source faces the processing space. Magnetron magnets produce a magnetic trapping field having a null which acts as a mirror and separates a plasma-source from the processing space.
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Tokyo Electron Limited
VerSteeg Steven H
Wood, Herron & Evans, L. L. P.
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