Sputtering process employing an enclosed sputtering target

Details Sputtering process employing an enclosed sputtering target Sputtering process employing an enclosed sputtering target

1990-07-23

1991-12-03

Weisstuch, Aaron

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

20429806, 20429807, 20429812, 20429816, 20429821, C23C 1434, C23C 1435

Patent

active

050697706

ABSTRACT:
A sputtering process employs a target which defines a hollow sputtering chamber having a relatively small orifice or slit through which particles, sputtered from the chamber-defining interior surfaces of the target, can exit the chamber and deposit on a workpiece or substrate disposed externally of the chamber and facing the orifice. According to a preferred embodiment, heating of the substrate by high energy secondary electrons exiting the sputtering chamber through the target orifice is significantly reduced by producing a magnetic field within the sputtering chamber, and by arranging a positively biased electrode (i.e. an anode) within the sputtering chamber opposite the target orifice. The magnetic field serves to prevent the escape of a substantial portion of such electrons from the target interior, and the anode performs the same function by collecting such electrons as they impinge thereon.

REFERENCES:
patent: 3354074 (1967-11-01), Kay
patent: 4094764 (1978-06-01), Boucher et al.

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