Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Patent
1999-08-04
2000-11-28
Diamond, Alan
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
2041921, 20419213, 20419214, 20419215, 2041922, 20419217, 20412929, 20429802, 20429806, 20429809, 20429811, 20429812, 20429813, 20419232, 20419234, 427 96, 427 97, 427 99, 427534, 427536, 427537, 4272481, 4272557, 427533, 427377, 427314, 1562722, 1562726, 134 11, C23C 1400, C23C 1434, C23C 1422
Patent
active
061530603
ABSTRACT:
A method for coating substrates having sides of the substrate with unequal adhesion properties includes the steps of non-symmetrically coating the substrate by coating a first side under a first set of coating conditions and coating a second side under a second set of operating conditions wherein the operating conditions used to coat each side are varied so as to compensate for the unequal adhesion properties of the sides. Also, a method for substrate preparation comprising the steps of: providing an annealed thermoplastic substrate base layer having a first surface and a second surface; stabilizing the substrate base layer in an environment having a baseline temperature and relative humidity; drilling vias in the base layer; subjecting the first and second surfaces of the base layer to ion processing so as to remove contaminants caused by drilling the vias and to prepare the first and second surfaces for sputtering; metalizing the base layer by first sputtering at least one metal layer onto the first surface of the base layer and subsequently sputtering at least one metal layer onto the second surface of the base layer said sputtering of the metal layers being controlled so as to prevent the temperature of the base layer from exceeding the annealing temperature of the base layer; allowing the metalized base layer to stabilize in an environment having the baseline temperature and relative humidity and then subjecting the metalized base layer to further processing so as to modify the metal layers into conductive patterns.
REFERENCES:
patent: 5202220 (1993-04-01), Park et al.
patent: 5525369 (1996-06-01), Blackwell et al.
patent: 5840161 (1998-11-01), Woodard et al.
Avery Stephen M.
Pommer Richard J.
Roeters Glen
Brueske Curtis B.
Diamond Alan
Honeywell International , Inc.
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