Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Patent
1996-04-12
2000-09-05
McDonald, Rodney
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
20429807, 20429825, 20429827, 20429828, C23C 1434
Patent
active
061137499
ABSTRACT:
A substrate is processed in a device having a vacuum chamber, at least one sputtering chamber, and a flow channel connecting the vacuum chamber to the sputtering chamber. According to the method, material is sputtered onto the substrate located in the sputtering chamber so that a sputtering gas flux amount is consumed by deposition onto the substrate. Prior to and during sputtering, sputtering gas flux flows into the vacuum chamber so that the total amount of sputtering gas flux flowed into the vacuum chamber prior to sputtering is substantially equal to the sputtering gas flux amount. At least during sputtering, the vacuum chamber is maintained at a partial pressure in a range of from more than 1.times.10.sup.-5 mbar up to 5.times.10.sup.-3 mbar.
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Kok Ronaldus J.C.M.
Landsbergen Jeroen F.M.
Visser Jan
McDonald Rodney
Odme International B.V.
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