Sputtering method for fabricating thin film

Details Sputtering method for fabricating thin film Sputtering method for fabricating thin film

1989-06-07

1991-09-17

Weisstuch, Aaron

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

204298, 20429804, C23C 1434, C23C 1454

Patent

active

050492519

ABSTRACT:
A method for sputtering by a glow discharge in gas is disclosed. The sputtering chamber is evacuated by a pump with a high speed, and the flow rate of the gas injected into the chamber is varied periodically between a high flow rate and a low flow rate. During the high flow rate, the discharge is ignited. The glow discharge is sustained during the low flow rate injection period, and when the pressure becomes too low to maintain a stable discharge, the flow rate is again increased to ignite or reinforce the electric discharge. In such a manner, the flow rate of the injection gas is periodically alternated between a high and a low injection rate. The sputtering is mostly done at the lower injection rates, and the evacuation speed is kept always high. Accordingly, contamination otherwise caused by residual gas is prevented, and a high grade sputtered film is obtained. By operating in this manner, the gas consumption is reduced and the life of the cryogenic pump, used for evacuating the sputtering chamber, is prolonged, and hence the on line operation of the sputtering device is improved.

REFERENCES:
patent: 4379743 (1983-04-01), Nakatsukasa et al.
patent: 4428812 (1984-01-01), Sproul
patent: 4440618 (1984-04-01), Suzuki et al.

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