Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Patent
1988-01-20
1990-02-20
Nguyen, Nam X.
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
204298, C23C 1434
Patent
active
049023942
ABSTRACT:
A sputtering method and apparatus for use in forming thin films on a substrate. The power output of a sputtering power source is periodically changed to a high level power and a low level power, and each film is deposited to a thickness corresponding to the integrated value of the high level power, whereby a desired thickness can be obtained in any of multilayer films having mutually different film thickness ratios.
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"Significant Features of Solder Connections to Gold-Plated Thin Films", by Keller, Electron Components Conf., vol. 32, pp. 346-353 1982.
"Internal Stresses and Resistivity of Low-Coltage Sputtered Tungsten Films", by Sun et al., Journal of Applied Physics, vol. 44, No. 3, Mar. 1973.
Kenmotsu Akihiro
Kobayashi Shigeru
Koshita Toshiyuki
Matsuzaki Eiji
Nakatani Mitsuo
Hitachi , Ltd.
Nguyen Nam X.
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