Sputtering method and apparatus

Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering

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204298, C23C 1454

Patent

active

048941328

ABSTRACT:
A sputtering method and apparatus are disclosed in which a target metal is sputtered by a glow discharge in sputtering gases to deposit the target metal on a semiconductor wafer. AN absorption spectrum of the sputtering atmosphere is measured during the sputtering of the target metal. The sputtering conditions of the target metal are controlled to provide a predetermined absorption spectrum.

REFERENCES:
patent: 3654109 (1972-04-01), Hohl et al.
patent: 3734620 (1973-05-01), Cade
patent: 4166784 (1979-09-01), Chapin et al.

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