Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Patent
1995-07-24
2000-08-01
McDonald, Rodney
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
20419215, 20419222, 20419223, 20429806, 20429816, 20429819, C23C 1434
Patent
active
060961767
ABSTRACT:
A target and a wafer are opposed to each other in a processing vessel in the form of a quartz tube whose internal pressure can be reduced. A low bias voltage is applied to the wafer while Helicon wave plasma of high density is generated between the target and the wafer by an antenna disposed on the circumference of the processing vessel. The wafer is positioned near and outside a lower boundary of a region of the plasma. Deposition seeds from the target are ionized in the plasma region and accelerated vertically to be incident on the wafer and are deposited first on the bottoms of the grooves in a surface of the wafer. In burying deposition seeds in grooves and holes of high aspect ratios which are formed in the surface of the wafer, the deposition seeds can be deposited first on the bottoms without occurrence of voids.
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Sadakuni et al., "Reactive Sputter deposition of SiO2 Film Employing Helicon Wave Plasma", Extended Abstract (The 41 st Spring Meeting, 1994); The Japanese Society of Applied Physics and Related Societies No. 2, Mar. 1994.
"Reactive Sputter Deposition of SiO.sub.2 Film Employing Helicon Wave Plasma" Extended Abstract (The 41.sup.st Spring Meeting, 1994); The Japanese Society of Applied Physics and Related Societies No. 2.
Fukasawa Takayuki
Horiike Yasuhiro
McDonald Rodney
Tokyo Electron Limited
Tokyo Electron Yamanashi Limited
Yasuhiro Horiike
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