Chemistry: electrical and wave energy – Apparatus – Coating – forming or etching by sputtering
Patent
1991-02-11
1992-07-28
Nguyen, Nam
Chemistry: electrical and wave energy
Apparatus
Coating, forming or etching by sputtering
20429818, 20429819, 20429821, C23C 1434
Patent
active
051338505
ABSTRACT:
Cathode base (1) has a hollow target (8) disposed thereon with at least one planar sputtering surface (8a), of circular shape for example, which is encompassed by at least two concentric, continuous projections (8b, 8c), and with a magnet system (6) with pole faces (6c, 6d) of opposite polarity lying on both sides of the target (8) for the production of magnetic lines of force (11, 11', . . . ) running substantially parallel to the sputtering surface (16a), the wall surfaces (8d, 8e) of the projections (8b, 8c) of the target (8), adjoining the sputtering surface (8a) being disposed at an angle (.alpha.) to the perpendicular, is preferably in a range between 30 and 70 degrees.
REFERENCES:
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patent: 4405436 (1983-09-01), Kobayashi et al.
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patent: 4486287 (1984-12-01), Fournier
patent: 4604180 (1986-08-01), Hirukawa et al.
patent: 4747926 (1988-05-01), Shimuzu
patent: 4933064 (1990-06-01), Geisler et al.
Fritsche Wolf-Eckart
Kukla Reiner
Sichmann Eggo
Leybold Aktiengesellschaft
Nguyen Nam
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