Sputtering cathode based on the magnetron principle

Details Sputtering cathode based on the magnetron principle Sputtering cathode based on the magnetron principle

1999-04-29

2000-06-20

Diamond, Alan

Chemistry: electrical and wave energy

Apparatus

Coating, forming or etching by sputtering

20429812, 20429816, 20429817, 20429802, H01J 3734

Patent

active

06077407&

ABSTRACT:
A sputtering cathode based on the magnetron principle, with a target of the material to be sputtered having a minimum of one component, with a magnetic system located beneath the target and having magnetic sources of different polarization which form a minimum of one self-enclosed tunnel of arcuate magnetic lines of force, having the poles of the sources facing away from the target connected to each other via a magnetic yoke made of a material of low retentivity, the bodies forming the sources of the magnetic fields being right prisms, and preferably right parallelepipeds, the base edges of which run parallel to the target plane, with the magnetic lines of force of the sources running at inclined angles relative to the base surfaces of the bodies.

REFERENCES:
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patent: 4180450 (1979-12-01), Morrison, Jr.
patent: 4265729 (1981-05-01), Morrison, Jr.
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patent: 4461688 (1984-07-01), Morrison, Jr.
patent: 4904362 (1990-02-01), Gaertner et al.
patent: 5262030 (1993-11-01), Potter
patent: 5399253 (1995-03-01), Grunenfelder
patent: 5540823 (1996-07-01), Fritsche
Patents Abstracts of Japan, C412 Mar. 26, 1987 vol., 11/No. 96.
Patent Abstract of Japan, Abstract for JP 8-232063A, Sep. 1996.
Patent Abstract of Japan, Abstract for JP 8-333680A, Dec. 1996.

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